FDT55AN06LA0
MOSFET N-CH 60V 12.1A SOT223-4Manufacturer: onsemi
Categories: Single FETs, MOSFETs
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onsemi's FDT55AN06LA0 is an N-Channel PowerTrench® MOSFET designed for high-efficiency switching applications. Featuring a Drain-Source Voltage (Vdss) of 60V, this device offers a continuous drain current (Id) of 12.1A at 25°C (Tc) and a maximum power dissipation of 8.9W (Tc). The Rds(on) is specified at a maximum of 46mOhm at 11A and 10V Vgs. Key parameters include Gate Charge (Qg) of 10 nC @ 10 V and input capacitance (Ciss) of 1130 pF @ 25 V. This MOSFET is housed in a SOT-223-4 package, offering a surface mount solution. Typical applications include power management, motor control, and DC-DC converters across various industrial sectors. The operating temperature range is -55°C to 150°C (TJ).
Additional Information
Series: PowerTrench®RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-261-4, TO-261AA |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 12.1A (Tc) |
| Rds On (Max) @ Id, Vgs | 46mOhm @ 11A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 8.9W (Tc) |
| Vgs(th) (Max) @ Id | 3V @ 250µA |
| Supplier Device Package | SOT-223-4 |
| Drive Voltage (Max Rds On, Min Rds On) | 5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 60 V |
| Gate Charge (Qg) (Max) @ Vgs | 10 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1130 pF @ 25 V |