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FDT461N

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FDT461N

MOSFET N-CH 100V 540MA SOT223-4

Manufacturer: onsemi

Categories: Single FETs, MOSFETs

Quality Control: Learn More

The onsemi FDT461N is an N-Channel PowerTrench® MOSFET designed for demanding applications. This component features a Drain-to-Source Voltage (Vdss) of 100V and a continuous drain current (Id) of 540mA at 25°C (Ta), with a maximum power dissipation of 1.13W (Ta). The SOT-223-4 (TO-261-4, TO-261AA) package facilitates surface mounting. Key electrical characteristics include a maximum Rds On of 2 Ohms at 540mA and 10V, and a gate charge (Qg) of 4 nC at 10V. Input capacitance (Ciss) is specified at a maximum of 74 pF at 25V. The operating temperature range is -55°C to 150°C (TJ), with a maximum gate-source voltage (Vgs) of ±20V and a threshold voltage (Vgs(th)) of 2V at 250µA. This MOSFET is suitable for use in power management and general-purpose switching applications.

Additional Information

Series: PowerTrench®RoHS Status: RoHS CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:
Technical Details:
PackagingTape & Reel (TR)
Package / CaseTO-261-4, TO-261AA
Mounting TypeSurface Mount
Operating Temperature-55°C ~ 150°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeN-Channel
Current - Continuous Drain (Id) @ 25°C540mA (Ta)
Rds On (Max) @ Id, Vgs2Ohm @ 540mA, 10V
FET Feature-
Power Dissipation (Max)1.13W (Ta)
Vgs(th) (Max) @ Id2V @ 250µA
Supplier Device PackageSOT-223-4
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Vgs (Max)±20V
Drain to Source Voltage (Vdss)100 V
Gate Charge (Qg) (Max) @ Vgs4 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds74 pF @ 25 V

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