FDT3N40TF
MOSFET N-CH 400V 2A SOT223-4Manufacturer: onsemi
Categories: Single FETs, MOSFETs
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The onsemi UniFET™ FDT3N40TF is an N-Channel Power MOSFET designed for high voltage applications. Featuring a Drain-Source Voltage (Vdss) of 400V and a continuous Drain Current (Id) of 2A at 25°C, this component is suitable for power factor correction, switch mode power supplies, and general purpose power switching in the consumer electronics and industrial automation sectors. The SOT-223-4 package provides a surface mount solution with a maximum power dissipation of 2W. Key electrical characteristics include a low on-resistance of 3.4 Ohms maximum at 1A, 10V, a gate charge of 6 nC maximum at 10V, and an input capacitance of 225 pF maximum at 25V. The operating temperature range is -55°C to 150°C.
Additional Information
Series: UniFET™RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-261-4, TO-261AA |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 2A (Tc) |
| Rds On (Max) @ Id, Vgs | 3.4Ohm @ 1A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 2W (Tc) |
| Vgs(th) (Max) @ Id | 5V @ 250µA |
| Supplier Device Package | SOT-223-4 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 400 V |
| Gate Charge (Qg) (Max) @ Vgs | 6 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 225 pF @ 25 V |
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