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FDS9435A-NBAD008

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FDS9435A-NBAD008

-30V P-CHANNEL POWERTRENCH MOSFE

Manufacturer: onsemi

Categories: Single FETs, MOSFETs

Quality Control: Learn More

onsemi FDS9435A-NBAD008 is a P-Channel PowerTrench® MOSFET designed for efficient power switching applications. This component features a Drain-to-Source Voltage (Vdss) of 30V and a continuous Drain current (Id) of 5.3A at 25°C. The Rds(On) is specified at a maximum of 50mOhm at 5.3A and 10V Vgs. With a total gate charge (Qg) of 14 nC at 10V, it offers optimized switching characteristics. The device operates over a temperature range of -55°C to 175°C and is housed in an 8-SOIC package, suitable for surface mounting. Key parameters include a maximum Vgs of ±25V and a threshold voltage (Vgs(th)) of 3V at 250µA. This MOSFET is commonly utilized in power management, automotive, and industrial control systems.

Additional Information

Series: PowerTrench®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: Not For New DesignsPackaging: Tape & Reel (TR)
Technical Details:
PackagingTape & Reel (TR)
Package / Case8-SOIC (0.154"", 3.90mm Width)
Mounting TypeSurface Mount
Operating Temperature-55°C ~ 175°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeP-Channel
Current - Continuous Drain (Id) @ 25°C5.3A (Ta)
Rds On (Max) @ Id, Vgs50mOhm @ 5.3A, 10V
FET Feature-
Power Dissipation (Max)1W (Ta)
Vgs(th) (Max) @ Id3V @ 250µA
Supplier Device Package8-SOIC
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Vgs (Max)±25V
Drain to Source Voltage (Vdss)30 V
Gate Charge (Qg) (Max) @ Vgs14 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds528 pF @ 15 V

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