FDS9412A
MOSFET N-CH 30V 8A 8SOICManufacturer: onsemi
Categories: Single FETs, MOSFETs
Quality Control: Learn More
The onsemi FDS9412A is an N-Channel PowerTrench® MOSFET designed for efficient switching applications. This component features a 30V drain-source breakdown voltage (Vds) and a continuous drain current (Id) capability of 8A at 25°C ambient temperature. With a low on-resistance (Rds On) of 21mOhm at 8A and 10V Vgs, it minimizes conduction losses. The device supports gate drive voltages from 4.5V to 10V and has a maximum gate charge (Qg) of 20 nC at 10V Vgs. Input capacitance (Ciss) is specified at a maximum of 985 pF at 15V Vds. The FDS9412A is housed in an 8-SOIC package for surface mounting, offering a power dissipation of 2.5W at 25°C ambient. It operates reliably across a temperature range of -55°C to 150°C. This MOSFET is commonly utilized in power management solutions and various industrial automation systems.
Additional Information
Series: PowerTrench®RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-SOIC (0.154"", 3.90mm Width) |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 8A (Ta) |
| Rds On (Max) @ Id, Vgs | 21mOhm @ 8A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 2.5W (Ta) |
| Vgs(th) (Max) @ Id | 2.5V @ 250µA |
| Supplier Device Package | 8-SOIC |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 20 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 985 pF @ 15 V |
Request a Quote
Clients Also Buy
FDN338P
MOSFET P-CH 20V 1.6A SUPERSOT3
FDG6332C
MOSFET N/P-CH 20V 0.7A SC88
FDC6420C
MOSFET N/P-CH 20V 3A/2.2A SSOT6
