FDS9412
MOSFET N-CH 30V 7.9A 8SOICManufacturer: onsemi
Categories: Single FETs, MOSFETs
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The onsemi FDS9412 is a N-Channel MOSFET designed for efficient power switching applications. This component features a Drain-Source Voltage (Vdss) of 30V and a continuous Drain Current (Id) of 7.9A at 25°C, with a maximum power dissipation of 2.5W (Ta). The Rds On is specified at a maximum of 22mOhm at 7.9A and 10V Vgs, with drive voltages ranging from 4.5V to 10V. Key characteristics include a gate charge (Qg) of 22 nC at 10V and an input capacitance (Ciss) of 830 pF at 15V. The FDS9412 is provided in an 8-SOIC package for surface mounting and operates within a temperature range of -55°C to 150°C. This device is commonly utilized in power management, consumer electronics, and industrial automation sectors.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-SOIC (0.154"", 3.90mm Width) |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 7.9A (Ta) |
| Rds On (Max) @ Id, Vgs | 22mOhm @ 7.9A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 2.5W (Ta) |
| Vgs(th) (Max) @ Id | 2V @ 250µA |
| Supplier Device Package | 8-SOIC |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 22 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 830 pF @ 15 V |
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