FDS8884-G
MOSFET N-CH 30V 8.5A 8SOICManufacturer: onsemi
Categories: Single FETs, MOSFETs
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onsemi FDS8884-G is an N-Channel MOSFET designed for efficient power switching applications. This device features a 30V drain-source breakdown voltage (Vdss) and a continuous drain current (Id) capability of 8.5A at 25°C. With a maximum on-resistance (Rds On) of 23mOhm at 8.5A and 10V Vgs, it offers low conduction losses. The FDS8884-G is housed in an 8-SOIC package, suitable for surface mounting with a power dissipation rating of 2.5W. Key electrical parameters include a gate charge (Qg) of 13 nC (max) and input capacitance (Ciss) of 635 pF (max). This MOSFET is utilized across various industries including consumer electronics, industrial automation, and automotive systems requiring reliable power management.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-SOIC (0.154"", 3.90mm Width) |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 8.5A (Ta) |
| Rds On (Max) @ Id, Vgs | 23mOhm @ 8.5A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 2.5W (Ta) |
| Vgs(th) (Max) @ Id | 2.5V @ 250µA |
| Supplier Device Package | 8-SOIC |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 13 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 635 pF @ 15 V |
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