FDS8878-G
MOSFET N-CH 30V 10.2A 8SOICManufacturer: onsemi
Categories: Single FETs, MOSFETs
Quality Control: Learn More
The onsemi FDS8878-G is an N-Channel PowerTrench® MOSFET designed for efficient power switching applications. This component features a 30V Drain-to-Source Voltage (Vdss) and a continuous drain current (Id) of 10.2A at 25°C, with a maximum power dissipation of 2.5W (Ta). Its low on-resistance is specified as 14mOhm at 10.2A and 10V Vgs. The device is housed in an 8-SOIC package for surface mounting and operates within a temperature range of -55°C to 150°C. Key electrical characteristics include a Gate Charge (Qg) of 26 nC (max) at 10V Vgs and an Input Capacitance (Ciss) of 897 pF (max) at 15V Vds. The FDS8878-G is suitable for use in various industrial and consumer electronics power management circuits. It is supplied in Tape & Reel packaging.
Additional Information
Series: PowerTrench®RoHS Status: RoHS CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-SOIC (0.154"", 3.90mm Width) |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 10.2A (Ta) |
| Rds On (Max) @ Id, Vgs | 14mOhm @ 10.2A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 2.5W (Ta) |
| Vgs(th) (Max) @ Id | 2.5V @ 250µA |
| Supplier Device Package | 8-SOIC |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 26 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 897 pF @ 15 V |
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