FDS8870
MOSFET N-CH 30V 18A 8SOICManufacturer: onsemi
Categories: Single FETs, MOSFETs
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The onsemi FDS8870 is a PowerTrench® series N-Channel MOSFET designed for efficient power switching applications. This device features a 30V Drain-Source Voltage (Vdss) rating and a continuous drain current capability of 18A at 25°C ambient temperature. Key performance specifications include a maximum Rds(on) of 4.2mOhm at 18A and 10V Vgs, and a low gate charge of 112 nC at 10V Vgs. The MOSFET is housed in a standard 8-SOIC package, suitable for surface mounting, and offers a power dissipation of 2.5W. Operating across a temperature range of -55°C to 150°C, it is well-suited for use in automotive, industrial, and consumer electronics power management systems. Drive voltage requirements are between 4.5V and 10V for optimal Rds(on) performance.
Additional Information
Series: PowerTrench®RoHS Status: ROHS3 CompliantManufacturer Lead Time: 16 week(s)Product Status: Last Time BuyPackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-SOIC (0.154"", 3.90mm Width) |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 18A (Ta) |
| Rds On (Max) @ Id, Vgs | 4.2mOhm @ 18A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 2.5W (Ta) |
| Vgs(th) (Max) @ Id | 2.5V @ 250µA |
| Supplier Device Package | 8-SOIC |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 112 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 4615 pF @ 15 V |
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