FDS8817NZ
MOSFET N-CH 30V 15A 8SOICManufacturer: onsemi
Categories: Single FETs, MOSFETs
Quality Control: Learn More
onsemi PowerTrench® N-Channel MOSFET, part number FDS8817NZ, offers a 30V drain-source breakdown voltage with a continuous drain current capability of 15A at 25°C. This surface mount device, packaged in an 8-SOIC (0.154", 3.90mm Width), features a low on-resistance of 7mOhm at 15A and 10V Vgs. Key specifications include a maximum power dissipation of 2.5W (Ta), a gate charge (Qg) of 45 nC at 10V, and an input capacitance (Ciss) of 2400 pF at 15V. It operates efficiently across a temperature range of -55°C to 150°C (TJ) with a maximum gate-source voltage of ±20V and a threshold voltage (Vgs(th)) of 3V at 250µA. The FDS8817NZ is utilized in various industrial applications including power management and automotive electronics.
Additional Information
Series: PowerTrench®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-SOIC (0.154"", 3.90mm Width) |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 15A (Ta) |
| Rds On (Max) @ Id, Vgs | 7mOhm @ 15A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 2.5W (Ta) |
| Vgs(th) (Max) @ Id | 3V @ 250µA |
| Supplier Device Package | 8-SOIC |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 45 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 2400 pF @ 15 V |
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