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FDS8813NZ

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FDS8813NZ

MOSFET N-CH 30V 18.5A 8SOIC

Manufacturer: onsemi

Categories: Single FETs, MOSFETs

Quality Control: Learn More

The onsemi FDS8813NZ is an N-Channel PowerTrench® MOSFET designed for efficient switching applications. This component features a Drain-to-Source Voltage (Vdss) of 30 V and a continuous Drain Current (Id) capability of 18.5 A at 25°C with a maximum power dissipation of 2.5 W (Ta). Optimized for low on-resistance, it offers a maximum Rds(On) of 4.5 mOhm at 18.5 A and 10 V Vgs. The device boasts a low gate charge of 76 nC maximum at 10 V and an input capacitance (Ciss) of 4145 pF maximum at 15 V. Operating across a temperature range of -55°C to 150°C (TJ), it is housed in an 8-SOIC package suitable for surface mounting. This MOSFET is commonly utilized in power management solutions across various industries.

Additional Information

Series: PowerTrench®RoHS Status: ROHS3 CompliantManufacturer Lead Time: 16 week(s)Product Status: Last Time BuyPackaging: Tape & Reel (TR)Datasheet:
Technical Details:
PackagingTape & Reel (TR)
Package / Case8-SOIC (0.154"", 3.90mm Width)
Mounting TypeSurface Mount
Operating Temperature-55°C ~ 150°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeN-Channel
Current - Continuous Drain (Id) @ 25°C18.5A (Ta)
Rds On (Max) @ Id, Vgs4.5mOhm @ 18.5A, 10V
FET Feature-
Power Dissipation (Max)2.5W (Ta)
Vgs(th) (Max) @ Id3V @ 250µA
Supplier Device Package8-SOIC
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Vgs (Max)±20V
Drain to Source Voltage (Vdss)30 V
Gate Charge (Qg) (Max) @ Vgs76 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds4145 pF @ 15 V

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