FDS8812NZ
MOSFET N-CH 30V 20A 8SOICManufacturer: onsemi
Categories: Single FETs, MOSFETs
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The onsemi FDS8812NZ is an N-Channel PowerTrench® MOSFET designed for efficient power management applications. This device features a 30V drain-source breakdown voltage and a continuous drain current capability of 20A at 25°C, with a maximum power dissipation of 2.5W. The low on-resistance of 4mOhm at 20A and 10V Vgs is achieved through advanced PowerTrench® technology. Key parameters include a gate charge (Qg) of 126 nC at 10V and input capacitance (Ciss) of 6925 pF at 15V. The FDS8812NZ is supplied in an 8-SOIC surface mount package, suitable for high-density board designs. Operating temperature range is -55°C to 150°C (TJ). This component is widely utilized in power conversion, battery management, and consumer electronics.
Additional Information
Series: PowerTrench®RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-SOIC (0.154"", 3.90mm Width) |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 20A (Ta) |
| Rds On (Max) @ Id, Vgs | 4mOhm @ 20A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 2.5W (Ta) |
| Vgs(th) (Max) @ Id | 3V @ 250µA |
| Supplier Device Package | 8-SOIC |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 126 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 6925 pF @ 15 V |
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