FDS8690
MOSFET N-CH 30V 14A 8SOICManufacturer: onsemi
Categories: Single FETs, MOSFETs
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The onsemi FDS8690 is a PowerTrench® series N-Channel MOSFET designed for efficient power switching applications. This component features a drain-to-source voltage (Vdss) of 30V and a continuous drain current (Id) of 14A at 25°C ambient. With a low on-resistance (Rds On) of 7.6mOhm at 14A and 10V Vgs, it minimizes conduction losses. The device offers a maximum power dissipation of 2.5W (Ta) in an 8-SOIC surface mount package, facilitating compact board designs. Key electrical characteristics include a gate charge (Qg) of 27 nC at 10V and input capacitance (Ciss) of 1680 pF at 15V. This MOSFET is commonly utilized in power management, consumer electronics, and industrial automation.
Additional Information
Series: PowerTrench®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-SOIC (0.154"", 3.90mm Width) |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 14A (Ta) |
| Rds On (Max) @ Id, Vgs | 7.6mOhm @ 14A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 2.5W (Ta) |
| Vgs(th) (Max) @ Id | 3V @ 250µA |
| Supplier Device Package | 8-SOIC |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 27 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1680 pF @ 15 V |
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