FDS8672S
MOSFET N-CH 30V 18A 8SOICManufacturer: onsemi
Categories: Single FETs, MOSFETs
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The onsemi FDS8672S is an N-Channel Power MOSFET designed for efficient power switching applications. This component, part of the PowerTrench®, SyncFET™ series, features a 30V drain-source voltage and a continuous drain current capability of 18A at 25°C. It offers a low on-resistance of 4.8 mOhm maximum at 18A and 10V Vgs, coupled with a gate charge of 41 nC maximum at 10V Vgs. The MOSFET utilizes Metal Oxide technology and is housed in an 8-SOIC package for surface mounting, with a maximum power dissipation of 2.5W. Key electrical characteristics also include an input capacitance (Ciss) of 2670 pF maximum at 15V Vds and a gate-source threshold voltage (Vgs(th)) of 3V maximum at 1mA. Operating across a temperature range of -55°C to 150°C, this device is suitable for use in power management, automotive, and industrial control systems.
Additional Information
Series: PowerTrench®, SyncFET™RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-SOIC (0.154"", 3.90mm Width) |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 18A (Ta) |
| Rds On (Max) @ Id, Vgs | 4.8mOhm @ 18A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 2.5W (Ta) |
| Vgs(th) (Max) @ Id | 3V @ 1mA |
| Supplier Device Package | 8-SOIC |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 41 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 2670 pF @ 15 V |
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