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FDS7288N3

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FDS7288N3

MOSFET N-CH 30V 20A 8SO

Manufacturer: onsemi

Categories: Single FETs, MOSFETs

Quality Control: Learn More

The onsemi FDS7288N3 is a PowerTrench® N-Channel MOSFET designed for robust power switching applications. This component features a 30V drain-source voltage rating and a continuous drain current capability of 20A at 25°C. The Rds(on) is specified at a maximum of 4.5mOhm at 20.5A and 10V gate-source voltage. It offers a gate charge of 69 nC typical at 10V and an input capacitance (Ciss) of 3300 pF maximum at 15V. The device supports a wide gate drive voltage range from 4.5V to 10V and has a maximum gate-source voltage of ±20V. With a maximum power dissipation of 3W, it is housed in an 8-SOIC FLMP package suitable for surface mounting and operates across a temperature range of -55°C to 150°C. This MOSFET finds application in industries such as automotive and industrial power management.

Additional Information

Series: PowerTrench®RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)
Technical Details:
PackagingTape & Reel (TR)
Package / Case8-SOIC (0.154"", 3.90mm Width) Exposed Pad
Mounting TypeSurface Mount
Operating Temperature-55°C ~ 150°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeN-Channel
Current - Continuous Drain (Id) @ 25°C20A (Ta)
Rds On (Max) @ Id, Vgs4.5mOhm @ 20.5A, 10V
FET Feature-
Power Dissipation (Max)3W (Ta)
Vgs(th) (Max) @ Id3V @ 250µA
Supplier Device Package8-SO FLMP
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Vgs (Max)±20V
Drain to Source Voltage (Vdss)30 V
Gate Charge (Qg) (Max) @ Vgs69 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds3300 pF @ 15 V

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