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FDS7079ZN3

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FDS7079ZN3

MOSFET P-CH 30V 16A 8SO

Manufacturer: onsemi

Categories: Single FETs, MOSFETs

Quality Control: Learn More

The onsemi FDS7079ZN3 is a P-Channel PowerTrench® MOSFET designed for demanding applications. This device features a 30V drain-source breakdown voltage and a continuous drain current capability of 16A at 25°C (Ta). With a low on-resistance of 7.5mOhm at 16A and 10V Vgs, it minimizes conduction losses. The FDS7079ZN3 is housed in an 8-SOIC (0.154", 3.90mm Width) Exposed Pad package, suitable for surface mounting and tape and reel packaging. Key parameters include a gate charge (Qg) of 55 nC at 5V and an input capacitance (Ciss) of 3630 pF at 15V. The device operates across a wide temperature range of -55°C to 150°C (TJ) and offers a maximum power dissipation of 3.13W (Ta). This MOSFET is commonly utilized in power management, automotive, and industrial sectors.

Additional Information

Series: PowerTrench®RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)
Technical Details:
PackagingTape & Reel (TR)
Package / Case8-SOIC (0.154"", 3.90mm Width) Exposed Pad
Mounting TypeSurface Mount
Operating Temperature-55°C ~ 150°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeP-Channel
Current - Continuous Drain (Id) @ 25°C16A (Ta)
Rds On (Max) @ Id, Vgs7.5mOhm @ 16A, 10V
FET Feature-
Power Dissipation (Max)3.13W (Ta)
Vgs(th) (Max) @ Id3V @ 250µA
Supplier Device Package8-SO FLMP
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Vgs (Max)±25V
Drain to Source Voltage (Vdss)30 V
Gate Charge (Qg) (Max) @ Vgs55 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds3630 pF @ 15 V

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