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FDS7066N7

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FDS7066N7

MOSFET N-CH 30V 23A 8SO

Manufacturer: onsemi

Categories: Single FETs, MOSFETs

Quality Control: Learn More

The onsemi FDS7066N7 is a PowerTrench® N-Channel MOSFET with a Drain-Source Voltage (Vdss) of 30 V. This component offers a continuous drain current (Id) of 23 A at 25°C and a maximum power dissipation of 3 W. It features low Rds(on) of 4.5 mOhm at Id 23 A and Vgs 10 V, with a gate-to-source voltage (Vgs) tolerance up to ±16 V. The device has a typical gate charge (Qg) of 69 nC at 5 V and an input capacitance (Ciss) of 4973 pF at 15 V. Designed for surface mounting, it is supplied in an 8-SOIC (FLMP) package and operates across a temperature range of -55°C to 150°C (TJ). This MOSFET is suitable for applications in power management and high-current switching.

Additional Information

Series: PowerTrench®RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)
Technical Details:
PackagingTape & Reel (TR)
Package / Case8-SOIC (0.154"", 3.90mm Width) Exposed Pad
Mounting TypeSurface Mount
Operating Temperature-55°C ~ 150°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeN-Channel
Current - Continuous Drain (Id) @ 25°C23A (Ta)
Rds On (Max) @ Id, Vgs4.5mOhm @ 23A, 10V
FET Feature-
Power Dissipation (Max)3W (Ta)
Vgs(th) (Max) @ Id3V @ 250µA
Supplier Device Package8-SO FLMP
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Vgs (Max)±16V
Drain to Source Voltage (Vdss)30 V
Gate Charge (Qg) (Max) @ Vgs69 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds4973 pF @ 15 V

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