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FDS7066N3

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FDS7066N3

MOSFET N-CH 30V 23A 8SO

Manufacturer: onsemi

Categories: Single FETs, MOSFETs

Quality Control: Learn More

The onsemi FDS7066N3 is an N-Channel PowerTrench® MOSFET designed for high-efficiency power switching applications. This component features a 30V drain-source breakdown voltage (Vdss) and a continuous drain current capability of 23A at 25°C (Ta), with a maximum power dissipation of 3W (Ta). Its low on-resistance, specified at a maximum of 5.5mOhm at 23A and 10V Vgs, is achieved with a 4.5V to 10V drive voltage range. The device exhibits a typical gate charge (Qg) of 69 nC at 5V Vgs and input capacitance (Ciss) of 4973 pF at 15V Vds. Housed in an 8-SO FLMP package with an exposed pad, this surface mount device operates across a temperature range of -55°C to 150°C (TJ). This MOSFET is commonly utilized in automotive, industrial, and computing power management systems.

Additional Information

Series: PowerTrench®RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)
Technical Details:
PackagingTape & Reel (TR)
Package / Case8-SOIC (0.154"", 3.90mm Width) Exposed Pad
Mounting TypeSurface Mount
Operating Temperature-55°C ~ 150°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeN-Channel
Current - Continuous Drain (Id) @ 25°C23A (Ta)
Rds On (Max) @ Id, Vgs5.5mOhm @ 23A, 10V
FET Feature-
Power Dissipation (Max)3W (Ta)
Vgs(th) (Max) @ Id3V @ 250µA
Supplier Device Package8-SO FLMP
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Vgs (Max)±16V
Drain to Source Voltage (Vdss)30 V
Gate Charge (Qg) (Max) @ Vgs69 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds4973 pF @ 15 V

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