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FDS7064SN3

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FDS7064SN3

MOSFET N-CH 30V 16A 8SO

Manufacturer: onsemi

Categories: Single FETs, MOSFETs

Quality Control: Learn More

The onsemi FDS7064SN3 is an N-Channel PowerTrench® MOSFET designed for demanding applications. This component features a Drain-to-Source Voltage (Vdss) of 30 V and a continuous drain current (Id) of 16 A at 25°C. The Rds On is optimized at a maximum of 8 mOhm at 16 A, 10 V, achievable with drive voltages between 4.5V and 10V. Key parameters include a maximum gate charge (Qg) of 35 nC at 5 V and an input capacitance (Ciss) of 2800 pF at 15 V. The device offers a maximum power dissipation of 3.13 W at 25°C. It is housed in an 8-SOIC (0.154", 3.90mm Width) Exposed Pad package, suitable for surface mounting and supplied in Tape & Reel. This MOSFET is utilized in various industries including automotive, industrial power control, and consumer electronics where efficient power management is critical. The operating temperature range is -55°C to 150°C (TJ).

Additional Information

Series: PowerTrench®RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)
Technical Details:
PackagingTape & Reel (TR)
Package / Case8-SOIC (0.154"", 3.90mm Width) Exposed Pad
Mounting TypeSurface Mount
Operating Temperature-55°C ~ 150°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeN-Channel
Current - Continuous Drain (Id) @ 25°C16A (Ta)
Rds On (Max) @ Id, Vgs8mOhm @ 16A, 10V
FET Feature-
Power Dissipation (Max)3.13W (Ta)
Vgs(th) (Max) @ Id3V @ 1mA
Supplier Device Package8-SO FLMP
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Vgs (Max)±16V
Drain to Source Voltage (Vdss)30 V
Gate Charge (Qg) (Max) @ Vgs35 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds2800 pF @ 15 V

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