FDS6694
MOSFET N-CH 30V 12A 8SOICManufacturer: onsemi
Categories: Single FETs, MOSFETs
Quality Control: Learn More
onsemi FDS6694, an N-Channel Power MOSFET from the PowerTrench® series, offers a Drain-to-Source Voltage (Vdss) of 30V and a continuous drain current (Id) of 12A at 25°C. This surface mount component, packaged in an 8-SOIC, features a maximum on-resistance (Rds On) of 11mOhm at 12A and 10V. Key parameters include a gate charge (Qg) of 19 nC at 5V and input capacitance (Ciss) of 1293 pF at 15V. The device operates across a temperature range of -55°C to 175°C. This MOSFET is commonly utilized in power management, consumer electronics, and industrial applications.
Additional Information
Series: PowerTrench®RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-SOIC (0.154"", 3.90mm Width) |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 12A (Ta) |
| Rds On (Max) @ Id, Vgs | 11mOhm @ 12A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 2.5W (Ta) |
| Vgs(th) (Max) @ Id | 3V @ 250µA |
| Supplier Device Package | 8-SOIC |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 19 nC @ 5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1293 pF @ 15 V |
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