FDS6692A
MOSFET N-CH 30V 9A 8SOICManufacturer: onsemi
Categories: Single FETs, MOSFETs
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The onsemi FDS6692A is a PowerTrench® N-Channel MOSFET designed for efficient power switching applications. This component features a 30V drain-to-source voltage (Vdss) and a continuous drain current (Id) of 9A at 25°C. Its low on-resistance of 11.5mOhm at 9A and 10V Vgs, coupled with a maximum gate charge (Qg) of 29nC at 10V, ensures minimal conduction and switching losses. The MOSFET operates effectively with drive voltages from 4.5V to 10V and has a maximum gate-source voltage (Vgs) of ±20V. With a maximum power dissipation of 1.47W (Ta) and an operating temperature range of -55°C to 150°C, it is suitable for demanding environments. The FDS6692A is housed in a standard 8-SOIC package, commonly utilized in consumer electronics, industrial automation, and automotive systems.
Additional Information
Series: PowerTrench®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-SOIC (0.154"", 3.90mm Width) |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 9A (Ta) |
| Rds On (Max) @ Id, Vgs | 11.5mOhm @ 9A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 1.47W (Ta) |
| Vgs(th) (Max) @ Id | 2.5V @ 250µA |
| Supplier Device Package | 8-SOIC |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 29 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1610 pF @ 15 V |
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