FDS6690A-NBNP006
SINGLE N-CHANNEL, LOGIC LEVEL, PManufacturer: onsemi
Categories: Single FETs, MOSFETs
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onsemi FDS6690A-NBNP006 is a single N-channel PowerTrench® MOSFET designed for efficient switching applications. This device features a 30V drain-to-source voltage (Vdss) and a continuous drain current (Id) of 11A at 25°C, with a low on-resistance (Rds On) of 12.5mOhm at 11A and 10V. The logic-level gate drive capability, with a Vgs(th) of 3V at 250µA and a maximum gate drive voltage of 4.5V for optimal Rds On, makes it suitable for integration with lower voltage control circuitry. Key parameters include a maximum gate charge (Qg) of 16 nC at 5V and an input capacitance (Ciss) of 1205 pF at 15V. The component is housed in an 8-SOIC package with surface mount mounting type, and dissipates a maximum of 1W at 25°C. Operating temperature ranges from -55°C to 150°C (TJ). This MOSFET is commonly utilized in power management, automotive, and industrial applications. The part is supplied in Tape & Reel (TR) packaging.
Additional Information
Series: PowerTrench®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: Not For New DesignsPackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-SOIC (0.154"", 3.90mm Width) |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 11A (Ta) |
| Rds On (Max) @ Id, Vgs | 12.5mOhm @ 11A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 1W (Ta) |
| Vgs(th) (Max) @ Id | 3V @ 250µA |
| Supplier Device Package | 8-SOIC |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 16 nC @ 5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1205 pF @ 15 V |
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