FDS6685-NBCM003A
P-CHANNEL LOGIC LEVEL POWERTRENCManufacturer: onsemi
Categories: Single FETs, MOSFETs
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onsemi FDS6685-NBCM003A is a P-channel PowerTrench® MOSFET designed for demanding applications. This 30 V device features a continuous drain current capability of 8.8A (Ta) with a maximum power dissipation of 1W (Ta). It offers a low on-resistance of 20mOhm at 8.8A and 10V Vgs, achievable with gate drive voltages as low as 4.5V. Key parameters include a maximum gate charge of 24 nC @ 5 V and input capacitance of 1604 pF @ 15 V. The FDS6685-NBCM003A is housed in an 8-SOIC surface mount package and operates across a wide temperature range of -55°C to 175°C (TJ). This component is suitable for use in industrial and automotive power management systems.
Additional Information
Series: PowerTrench®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-SOIC (0.154"", 3.90mm Width) |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | P-Channel |
| Current - Continuous Drain (Id) @ 25°C | 8.8A (Ta) |
| Rds On (Max) @ Id, Vgs | 20mOhm @ 8.8A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 1W (Ta) |
| Vgs(th) (Max) @ Id | 3V @ 250µA |
| Supplier Device Package | 8-SOIC |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±25V |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 24 nC @ 5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1604 pF @ 15 V |
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