FDS6681Z-G
MOSFET P-CH 30V 20A 8SOICManufacturer: onsemi
Categories: Single FETs, MOSFETs
Quality Control: Learn More
The onsemi FDS6681Z-G is a P-Channel PowerTrench® MOSFET designed for demanding applications. This component offers a Drain-to-Source Voltage (Vdss) of 30 V and a continuous drain current (Id) of 20 A at 25°C (Ta). Its low on-resistance (Rds On) of 4.6 mOhm at 20 A and 10 V gate-source voltage (Vgs) makes it suitable for efficient power switching. The device features a maximum power dissipation of 2.5 W (Ta) and operates across a temperature range of -55°C to 150°C (TJ). With a gate charge (Qg) of 260 nC at 10 V and input capacitance (Ciss) of 7540 pF at 15 V, it is optimized for performance. The FDS6681Z-G is supplied in an 8-SOIC package, suitable for surface mounting, and is available on tape and reel. This MOSFET finds application in power management, automotive systems, and industrial controls.
Additional Information
Series: PowerTrench®RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-SOIC (0.154"", 3.90mm Width) |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | P-Channel |
| Current - Continuous Drain (Id) @ 25°C | 20A (Ta) |
| Rds On (Max) @ Id, Vgs | 4.6mOhm @ 20A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 2.5W (Ta) |
| Vgs(th) (Max) @ Id | 3V @ 250µA |
| Supplier Device Package | 8-SOIC |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±25V |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 260 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 7540 pF @ 15 V |
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