FDS6680AS
MOSFET N-CH 30V 11.5A 8SOICManufacturer: onsemi
Categories: Single FETs, MOSFETs
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onsemi FDS6680AS is an N-Channel PowerTrench®, SyncFET™ MOSFET designed for efficient power switching. This component features a 30V drain-source voltage and a continuous drain current of 11.5A at 25°C. The low on-resistance of 10mOhm at 11.5A and 10V Vgs, coupled with a low gate charge of 30 nC at 10V Vgs, ensures high performance. With a maximum power dissipation of 2.5W, it is suitable for applications requiring efficient thermal management. The 8-SOIC package facilitates surface mounting. This MOSFET is utilized in power management, consumer electronics, and industrial applications. Operating temperature range is -55°C to 150°C.
Additional Information
Series: PowerTrench®, SyncFET™RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-SOIC (0.154"", 3.90mm Width) |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 11.5A (Ta) |
| Rds On (Max) @ Id, Vgs | 10mOhm @ 11.5A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 2.5W (Ta) |
| Vgs(th) (Max) @ Id | 3V @ 1mA |
| Supplier Device Package | 8-SOIC |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 30 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1240 pF @ 15 V |
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