FDS6679
MOSFET P-CH 30V 13A 8SOICManufacturer: onsemi
Categories: Single FETs, MOSFETs
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The onsemi FDS6679 is a P-Channel PowerTrench® MOSFET designed for demanding applications. This component features a drain-source voltage (Vdss) of 30V and a continuous drain current (Id) of 13A at 25°C. With a maximum on-resistance (Rds On) of 9mOhm at 13A and 10V gate-source voltage, it offers efficient power handling. The device operates with gate drive voltages ranging from 4.5V to 10V and has a maximum gate charge (Qg) of 100 nC at 10V. Input capacitance (Ciss) is specified at 3939 pF maximum at 15V. The FDS6679 is housed in an 8-SOIC package for surface mounting and can operate across a temperature range of -55°C to 175°C. This MOSFET is commonly utilized in power management, automotive, and industrial equipment.
Additional Information
Series: PowerTrench®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-SOIC (0.154"", 3.90mm Width) |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | P-Channel |
| Current - Continuous Drain (Id) @ 25°C | 13A (Ta) |
| Rds On (Max) @ Id, Vgs | 9mOhm @ 13A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 2.5W (Ta) |
| Vgs(th) (Max) @ Id | 3V @ 250µA |
| Supplier Device Package | 8-SOIC |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±25V |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 100 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 3939 pF @ 15 V |