FDS6676AS-G
30V N-CHANNEL POWERTRENCH SYNCFEManufacturer: onsemi
Categories: Single FETs, MOSFETs
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The onsemi FDS6676AS-G is a 30V N-Channel PowerTrench® MOSFET designed for high-efficiency power switching applications. This device features a low Rds(on) of 6mOhm at 14.5A and 10V Vgs, minimizing conduction losses. Its advanced PowerTrench® technology ensures optimal switching performance with a typical gate charge of 63 nC at 10V Vgs and an input capacitance of 2510 pF at 15V Vds. The component is housed in an 8-SOIC package, suitable for surface mounting, and offers a continuous drain current of 14.5A at 25°C ambient temperature with a power dissipation of 1W. Operating across a wide temperature range of -55°C to 150°C, this MOSFET is ideal for use in power supplies, DC-DC converters, and motor control circuits within the consumer electronics, industrial, and automotive sectors.
Additional Information
Series: PowerTrench®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-SOIC (0.154"", 3.90mm Width) |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 14.5A (Ta) |
| Rds On (Max) @ Id, Vgs | 6mOhm @ 14.5A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 1W (Ta) |
| Vgs(th) (Max) @ Id | 3V @ 1mA |
| Supplier Device Package | 8-SOIC |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 63 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 2510 pF @ 15 V |
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