FDS6673BZ-F085
MOSFET P-CH 30V 14.5A 8SOICManufacturer: onsemi
Categories: Single FETs, MOSFETs
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The onsemi FDS6673BZ-F085 is a P-Channel PowerTrench® MOSFET designed for demanding applications. Featuring a 30V drain-source breakdown voltage and a continuous drain current capability of 14.5A at 25°C, this device offers a low on-resistance of 7.8mOhm at 14.5A and 10V Vgs. The MOSFET is housed in an 8-SOIC package, suitable for surface mount integration. With a maximum power dissipation of 2.5W (Ta) and an operating temperature range of -55°C to 150°C, it meets AEC-Q101 qualification standards, making it ideal for automotive and industrial power management solutions. The device supports a gate drive range from 4.5V to 10V, with a maximum gate charge of 124 nC at 10V.
Additional Information
Series: PowerTrench®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-SOIC (0.154"", 3.90mm Width) |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | P-Channel |
| Current - Continuous Drain (Id) @ 25°C | 14.5A (Ta) |
| Rds On (Max) @ Id, Vgs | 7.8mOhm @ 14.5A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 2.5W (Ta) |
| Vgs(th) (Max) @ Id | 3V @ 250µA |
| Supplier Device Package | 8-SOIC |
| Grade | Automotive |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±25V |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 124 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 4700 pF @ 25 V |
| Qualification | AEC-Q101 |
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