FDS6673AZ
MOSFET P-CH 30V 14.5A 8SOICManufacturer: onsemi
Categories: Single FETs, MOSFETs
Quality Control: Learn More
onsemi FDS6673AZ is a P-Channel PowerTrench® MOSFET designed for efficient power switching applications. This component features a Drain-to-Source Voltage (Vdss) of 30V and a continuous Drain Current (Id) of 14.5A at 25°C. The Rds(On) is specified at a maximum of 7.2mOhm at 14.5A and 10V gate drive. Key parameters include a Gate Charge (Qg) of 118 nC (max) at 10V and an Input Capacitance (Ciss) of 4480 pF (max) at 15V. This device is available in an 8-SOIC package for surface mounting and offers a maximum power dissipation of 2.5W. The operating temperature range is -55°C to 175°C. This MOSFET is commonly utilized in industrial, computing, and consumer electronics power management solutions.
Additional Information
Series: PowerTrench®RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-SOIC (0.154"", 3.90mm Width) |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | P-Channel |
| Current - Continuous Drain (Id) @ 25°C | 14.5A (Ta) |
| Rds On (Max) @ Id, Vgs | 7.2mOhm @ 14.5A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 2.5W (Ta) |
| Vgs(th) (Max) @ Id | 3V @ 250µA |
| Supplier Device Package | 8-SOIC |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±25V |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 118 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 4480 pF @ 15 V |
Request a Quote
Clients Also Buy
FDN338P
MOSFET P-CH 20V 1.6A SUPERSOT3
FDG6332C
MOSFET N/P-CH 20V 0.7A SC88
FDC6420C
MOSFET N/P-CH 20V 3A/2.2A SSOT6
