FDS6575
MOSFET P-CH 20V 10A 8SOICManufacturer: onsemi
Categories: Single FETs, MOSFETs
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The onsemi FDS6575 is a P-Channel PowerTrench® MOSFET designed for demanding applications. This device features a Drain-to-Source Voltage (Vdss) of 20 V and a continuous Drain Current (Id) of 10 A at 25°C, with a maximum power dissipation of 2.5 W (Ta). Optimized for efficiency, it offers a low Rds On of 13 mOhm at 10 A and 4.5 V Vgs. The gate charge (Qg) is 74 nC at 4.5 V, and input capacitance (Ciss) is a maximum of 4951 pF at 10 V. The FDS6575 utilizes Metal Oxide technology and is housed in a surface-mount 8-SOIC package, supplied in Tape & Reel. Operating temperature ranges from -55°C to 175°C (TJ). This component is frequently employed in power management circuits within the automotive and industrial sectors.
Additional Information
Series: PowerTrench®RoHS Status: ROHS3 CompliantManufacturer Lead Time: 16 week(s)Product Status: Last Time BuyPackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-SOIC (0.154"", 3.90mm Width) |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | P-Channel |
| Current - Continuous Drain (Id) @ 25°C | 10A (Ta) |
| Rds On (Max) @ Id, Vgs | 13mOhm @ 10A, 4.5V |
| FET Feature | - |
| Power Dissipation (Max) | 2.5W (Ta) |
| Vgs(th) (Max) @ Id | 1.5V @ 250µA |
| Supplier Device Package | 8-SOIC |
| Drive Voltage (Max Rds On, Min Rds On) | 2.5V, 4.5V |
| Vgs (Max) | ±8V |
| Drain to Source Voltage (Vdss) | 20 V |
| Gate Charge (Qg) (Max) @ Vgs | 74 nC @ 4.5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 4951 pF @ 10 V |