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FDS6574A

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FDS6574A

MOSFET N-CH 20V 16A 8SOIC

Manufacturer: onsemi

Categories: Single FETs, MOSFETs

Quality Control: Learn More

onsemi's FDS6574A is a PowerTrench® series N-Channel MOSFET designed for efficient power switching applications. This device features a 20V Drain-to-Source Voltage (Vdss) and supports a continuous drain current of 16A at 25°C, with a maximum power dissipation of 2.5W. The low on-resistance of 6mOhm at 16A and 4.5V gate drive, coupled with a maximum gate charge (Qg) of 105 nC at 4.5V, ensures high switching efficiency. Input capacitance (Ciss) is rated at a maximum of 7657 pF at 10V. The FDS6574A utilizes advanced PowerTrench® MOSFET technology and is available in an 8-SOIC package suitable for surface mounting. Its operating temperature range is -55°C to 175°C. This component is commonly found in computing, automotive, and industrial power management systems.

Additional Information

Series: PowerTrench®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:
Technical Details:
PackagingTape & Reel (TR)
Package / Case8-SOIC (0.154"", 3.90mm Width)
Mounting TypeSurface Mount
Operating Temperature-55°C ~ 175°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeN-Channel
Current - Continuous Drain (Id) @ 25°C16A (Ta)
Rds On (Max) @ Id, Vgs6mOhm @ 16A, 4.5V
FET Feature-
Power Dissipation (Max)2.5W (Ta)
Vgs(th) (Max) @ Id1.5V @ 250µA
Supplier Device Package8-SOIC
Drive Voltage (Max Rds On, Min Rds On)1.8V, 4.5V
Vgs (Max)±8V
Drain to Source Voltage (Vdss)20 V
Gate Charge (Qg) (Max) @ Vgs105 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds7657 pF @ 10 V

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