FDS5690-NBBM009A
MOSFET N-CH 60V 7A 8SOICManufacturer: onsemi
Categories: Single FETs, MOSFETs
Quality Control: Learn More
The onsemi FDS5690-NBBM009A is an N-Channel Power MOSFET designed for efficient power switching applications. This component features a Drain-Source Voltage (Vdss) of 60V and a continuous Drain Current (Id) of 7A at 25°C (Ta). The Rds(On) is specified at a maximum of 28mOhm at 7A and 10V gate-source voltage. Key electrical parameters include a Gate Charge (Qg) of 32 nC (Max) at 10V and an Input Capacitance (Ciss) of 1107 pF (Max) at 30V. The device utilizes Metal Oxide technology and has a Gate Threshold Voltage (Vgs(th)) of 4V (Max) at 250µA. Packaged in an 8-SOIC (0.154", 3.90mm Width) surface-mount configuration, it is supplied on tape and reel. This MOSFET is suitable for use in industrial, automotive, and consumer electronics power management systems.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-SOIC (0.154"", 3.90mm Width) |
| Mounting Type | Surface Mount |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 7A (Ta) |
| Rds On (Max) @ Id, Vgs | 28mOhm @ 7A, 10V |
| FET Feature | - |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | 8-SOIC |
| Drain to Source Voltage (Vdss) | 60 V |
| Gate Charge (Qg) (Max) @ Vgs | 32 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1107 pF @ 30 V |
Request a Quote
Clients Also Buy
SMP3003-DL-1EX
MOSFET P-CH 75V 100A SMP-FD
FDMC86324
MOSFET N-CH 80V 7A/20A POWER33
NVTFS6H854NTAG
MOSFET N-CH 80V 9.5A/44A 8WDFN
