FDS5682
MOSFET N-CH 60V 7.5A 8SOICManufacturer: onsemi
Categories: Single FETs, MOSFETs
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The onsemi FDS5682 is an N-Channel Power MOSFET from the PowerTrench® series, designed for efficient switching applications. This device features a 60V drain-source breakdown voltage (Vdss) and a continuous drain current (Id) of 7.5A at 25°C. The Rds(on) is specified at a maximum of 21mOhm when conducting 7.5A with a 10V gate-source voltage. Its optimized PowerTrench® process ensures low on-resistance and low gate charge, with a typical gate charge (Qg) of 35 nC at 10V. The input capacitance (Ciss) is rated at a maximum of 1650 pF. The FDS5682 is housed in an 8-SOIC package for surface mounting and offers a maximum power dissipation of 2.5W. This component is suitable for use in power management systems, motor drivers, and DC-DC converters across various industrial and consumer electronics sectors. The operating temperature range is -55°C to 150°C.
Additional Information
Series: PowerTrench®RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-SOIC (0.154"", 3.90mm Width) |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 7.5A (Ta) |
| Rds On (Max) @ Id, Vgs | 21mOhm @ 7.5A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 2.5W (Ta) |
| Vgs(th) (Max) @ Id | 2V @ 250µA |
| Supplier Device Package | 8-SOIC |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 60 V |
| Gate Charge (Qg) (Max) @ Vgs | 35 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1650 pF @ 25 V |
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