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FDS4465-F085

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FDS4465-F085

MOSFET P-CH 20V 13.5A 8SOIC

Manufacturer: onsemi

Categories: Single FETs, MOSFETs

Quality Control: Learn More

The onsemi FDS4465-F085 is a P-Channel PowerTrench® MOSFET designed for demanding applications. Featuring a Drain-to-Source Voltage (Vdss) of 20V, this component offers a continuous drain current (Id) of 13.5A at 25°C and a maximum power dissipation of 2.5W (Ta). The device exhibits a low on-resistance of 8.5mOhm at 13.5A and 4.5V Vgs, with a gate charge (Qg) of 120 nC at 4.5V. It is housed in an 8-SOIC package and supports surface mounting. The FDS4465-F085 is qualified to AEC-Q101 standards, making it suitable for automotive applications. Drive voltage requirements range from 1.8V to 4.5V.

Additional Information

Series: PowerTrench®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:
Technical Details:
PackagingTape & Reel (TR)
Package / Case8-SOIC (0.154"", 3.90mm Width)
Mounting TypeSurface Mount
Operating Temperature-55°C ~ 150°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeP-Channel
Current - Continuous Drain (Id) @ 25°C13.5A (Ta)
Rds On (Max) @ Id, Vgs8.5mOhm @ 13.5A, 4.5V
FET Feature-
Power Dissipation (Max)2.5W (Ta)
Vgs(th) (Max) @ Id1.5V @ 250µA
Supplier Device Package8-SOIC
GradeAutomotive
Drive Voltage (Max Rds On, Min Rds On)1.8V, 4.5V
Vgs (Max)±8V
Drain to Source Voltage (Vdss)20 V
Gate Charge (Qg) (Max) @ Vgs120 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds8237 pF @ 10 V
QualificationAEC-Q101

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