FDS4435BZ-G
MOSFET P-CH 30V 8.8A 8SOICManufacturer: onsemi
Categories: Single FETs, MOSFETs
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The onsemi FDS4435BZ-G is a P-Channel PowerTrench® MOSFET designed for efficient power management applications. Featuring a Drain-to-Source Voltage (Vdss) of 30V, this component offers a continuous drain current (Id) of 8.8A at 25°C, with a maximum power dissipation of 1W (Ta). The Rds On is specified at 20mOhm at 8.8A and 10V. The device supports drive voltages from 4.5V to 10V and has a maximum Gate-Source Voltage (Vgs) of ±25V. Key electrical characteristics include a maximum Gate Charge (Qg) of 40 nC at 10V and a maximum Input Capacitance (Ciss) of 1845 pF at 15V. The FDS4435BZ-G utilizes Metal Oxide technology and is housed in an 8-SOIC package, suitable for surface mounting. Its operating temperature range is -55°C to 150°C (TJ). This MOSFET is commonly employed in industrial and consumer electronics sectors.
Additional Information
Series: PowerTrench®RoHS Status: RoHS CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-SOIC (0.154"", 3.90mm Width) |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | P-Channel |
| Current - Continuous Drain (Id) @ 25°C | 8.8A (Ta) |
| Rds On (Max) @ Id, Vgs | 20mOhm @ 8.8A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 1W (Ta) |
| Vgs(th) (Max) @ Id | 3V @ 250µA |
| Supplier Device Package | 8-SOIC |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±25V |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 40 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1845 pF @ 15 V |
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