FDS4435
MOSFET P-CH 30V 8.8A 8SOICManufacturer: onsemi
Categories: Single FETs, MOSFETs
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onsemi FDS4435 is a P-Channel PowerTrench® MOSFET offering a 30V drain-source voltage rating and continuous drain current capability of 8.8A at 25°C ambient. This device features a maximum on-resistance of 20mOhm at 8.8A and 10V Vgs. Optimized for efficient switching, it exhibits a gate charge of 24 nC maximum at 5V Vgs and an input capacitance of 1604 pF maximum at 15V Vds. The FDS4435 is housed in a standard 8-SOIC package, suitable for surface mounting and operation across a wide temperature range of -55°C to 175°C. This component finds application in various power management solutions, including battery charging circuits, DC-DC converters, and power distribution within automotive and industrial systems.
Additional Information
Series: PowerTrench®RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-SOIC (0.154"", 3.90mm Width) |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | P-Channel |
| Current - Continuous Drain (Id) @ 25°C | 8.8A (Ta) |
| Rds On (Max) @ Id, Vgs | 20mOhm @ 8.8A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 2.5W (Ta) |
| Vgs(th) (Max) @ Id | 3V @ 250µA |
| Supplier Device Package | 8-SOIC |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±25V |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 24 nC @ 5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1604 pF @ 15 V |
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