FDS3680
MOSFET N-CH 100V 5.2A 8SOICManufacturer: onsemi
Categories: Single FETs, MOSFETs
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The onsemi FDS3680 is an N-Channel PowerTrench® MOSFET designed for efficient power switching applications. This device features a 100V Drain-Source Voltage (Vdss) and a continuous drain current (Id) of 5.2A at 25°C, with a maximum power dissipation of 2.5W (Ta). The Rds(On) is specified at a maximum of 46mOhm at 5.2A and 10V gate-source voltage. Key parameters include a maximum gate charge (Qg) of 53 nC at 10V and input capacitance (Ciss) of 1735 pF at 50V. The FDS3680 is housed in an 8-SOIC package and is supplied on tape and reel. It operates across a temperature range of -55°C to 150°C (TJ). This component finds application in various power management systems, including consumer electronics and industrial automation.
Additional Information
Series: PowerTrench®RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-SOIC (0.154"", 3.90mm Width) |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 5.2A (Ta) |
| Rds On (Max) @ Id, Vgs | 46mOhm @ 5.2A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 2.5W (Ta) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | 8-SOIC |
| Drive Voltage (Max Rds On, Min Rds On) | 6V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 100 V |
| Gate Charge (Qg) (Max) @ Vgs | 53 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1735 pF @ 50 V |
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