FDS3512
MOSFET N-CH 80V 4A 8SOICManufacturer: onsemi
Categories: Single FETs, MOSFETs
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onsemi FDS3512 is an N-Channel PowerTrench® MOSFET designed for efficient power switching applications. This device features a Drain-Source Voltage (Vdss) of 80 V and can handle a continuous Drain Current (Id) of 4A at 25°C with a maximum power dissipation of 2.5W. The Rds On is specified at a maximum of 70mOhm when driven at 4A with a 10V Gate-Source voltage. Key parameters include a Gate Charge (Qg) of 18 nC (max) at 10V and an Input Capacitance (Ciss) of 634 pF (max) at 40V. The MOSFET is housed in an 8-SOIC package suitable for surface mounting and operates across a wide temperature range of -55°C to 175°C. This component finds application in various industrial sectors requiring robust power control solutions.
Additional Information
Series: PowerTrench®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-SOIC (0.154"", 3.90mm Width) |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 4A (Ta) |
| Rds On (Max) @ Id, Vgs | 70mOhm @ 4A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 2.5W (Ta) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | 8-SOIC |
| Drive Voltage (Max Rds On, Min Rds On) | 6V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 80 V |
| Gate Charge (Qg) (Max) @ Vgs | 18 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 634 pF @ 40 V |
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