FDS2672-F085
MOSFET N-CH 200V 3.9A 8SOICManufacturer: onsemi
Categories: Single FETs, MOSFETs
Quality Control: Learn More
onsemi UltraFET™ FDS2672-F085 is an N-Channel MOSFET designed for robust performance in demanding applications. This device features a Drain-to-Source Voltage (Vdss) of 200V and a continuous drain current (Id) of 3.9A at 25°C, with a maximum power dissipation of 2.5W (Ta). The on-resistance (Rds On) is a maximum of 70mOhm at 3.9A and 10V gate-source voltage. With a gate charge (Qg) of 46 nC at 10V and input capacitance (Ciss) of 2535 pF at 100V, it offers efficient switching characteristics. The FDS2672-F085 is supplied in an 8-SOIC package, suitable for surface mounting and delivered on tape and reel. This component meets AEC-Q101 qualification standards, making it suitable for automotive and industrial power management solutions.
Additional Information
Series: UltraFET™RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-SOIC (0.154"", 3.90mm Width) |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 3.9A (Ta) |
| Rds On (Max) @ Id, Vgs | 70mOhm @ 3.9A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 2.5W (Ta) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | 8-SOIC |
| Grade | Automotive |
| Drive Voltage (Max Rds On, Min Rds On) | 6V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 200 V |
| Gate Charge (Qg) (Max) @ Vgs | 46 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 2535 pF @ 100 V |
| Qualification | AEC-Q101 |
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