FDR858P
MOSFET P-CH 30V 8A SUPERSOT8Manufacturer: onsemi
Categories: Single FETs, MOSFETs
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The onsemi FDR858P is a P-Channel MOSFET designed for efficient power switching applications. This component features a 30V drain-source breakdown voltage and a continuous drain current capability of 8A at 25°C ambient. The low on-resistance of 19mOhm at 8A and 10V Vgs makes it suitable for applications requiring minimal conduction losses. With a gate charge of 30 nC (max) at 5V Vgs and input capacitance of 2010 pF (max) at 15V Vds, it offers good switching characteristics. The device is housed in a SuperSOT™-8 package, which is a Surface Mount 8-LSOP (0.130", 3.30mm Width), facilitating compact board designs. Maximum power dissipation is rated at 1.8W (Ta). Operating temperature range is from -55°C to 150°C. This MOSFET is utilized in industries such as automotive, industrial automation, and consumer electronics.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-LSOP (0.130"", 3.30mm Width) |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | P-Channel |
| Current - Continuous Drain (Id) @ 25°C | 8A (Ta) |
| Rds On (Max) @ Id, Vgs | 19mOhm @ 8A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 1.8W (Ta) |
| Vgs(th) (Max) @ Id | 3V @ 250µA |
| Supplier Device Package | SuperSOT™-8 |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 30 nC @ 5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 2010 pF @ 15 V |
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