FDR842P
MOSFET P-CH 12V 11A SUPERSOT8Manufacturer: onsemi
Categories: Single FETs, MOSFETs
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The onsemi FDR842P is a P-Channel MOSFET designed for various applications including automotive, industrial, and consumer electronics. This component features a Drain-to-Source Voltage (Vdss) of 12 V and a continuous Drain Current (Id) of 11 A at 25°C. The Rds On is rated at a maximum of 9 mOhm at 11 A and 4.5 V, with a Gate Drive Voltage range of 1.8 V to 4.5 V. Key parameters include a maximum Gate Charge (Qg) of 80 nC at 4.5 V and an input capacitance (Ciss) of 5350 pF at 6 V. The device is housed in a SuperSOT™-8 package, also known as 8-LSOP, for surface mounting. It supports an operating temperature range from -55°C to 150°C (TJ) and has a maximum power dissipation of 1.8 W (Ta). The part is supplied in Tape & Reel packaging.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-LSOP (0.130"", 3.30mm Width) |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | P-Channel |
| Current - Continuous Drain (Id) @ 25°C | 11A (Ta) |
| Rds On (Max) @ Id, Vgs | 9mOhm @ 11A, 4.5V |
| FET Feature | - |
| Power Dissipation (Max) | 1.8W (Ta) |
| Vgs(th) (Max) @ Id | 1.5V @ 250µA |
| Supplier Device Package | SuperSOT™-8 |
| Drive Voltage (Max Rds On, Min Rds On) | 1.8V, 4.5V |
| Vgs (Max) | ±8V |
| Drain to Source Voltage (Vdss) | 12 V |
| Gate Charge (Qg) (Max) @ Vgs | 80 nC @ 4.5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 5350 pF @ 6 V |
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