FDR838P
MOSFET P-CH 20V 8A SUPERSOT8Manufacturer: onsemi
Categories: Single FETs, MOSFETs
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The onsemi FDR838P is a P-Channel Power MOSFET designed for efficient power switching applications. This device features a Drain-to-Source Voltage (Vdss) of 20V and a continuous Drain Current (Id) of 8A at 25°C. Optimized for performance, it offers a low on-resistance (Rds On) of 17mOhm at 8A and 4.5V Vgs. The MOSFET utilizes a SuperSOT™-8 package, a surface-mount solution with a 8-LSOP (0.130", 3.30mm Width) case, facilitating high-density board designs. Key electrical characteristics include a maximum power dissipation of 1.8W (Ta) and a gate charge (Qg) of 45 nC at 4.5V. The input capacitance (Ciss) is specified at a maximum of 3300 pF at 10V. This component is employed in various industries including consumer electronics, industrial automation, and automotive systems. It operates across a wide temperature range from -55°C to 150°C (TJ).
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-LSOP (0.130"", 3.30mm Width) |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | P-Channel |
| Current - Continuous Drain (Id) @ 25°C | 8A (Ta) |
| Rds On (Max) @ Id, Vgs | 17mOhm @ 8A, 4.5V |
| FET Feature | - |
| Power Dissipation (Max) | 1.8W (Ta) |
| Vgs(th) (Max) @ Id | 1.5V @ 250µA |
| Supplier Device Package | SuperSOT™-8 |
| Drive Voltage (Max Rds On, Min Rds On) | 2.5V, 4.5V |
| Vgs (Max) | ±8V |
| Drain to Source Voltage (Vdss) | 20 V |
| Gate Charge (Qg) (Max) @ Vgs | 45 nC @ 4.5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 3300 pF @ 10 V |
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