Home

Products

Discrete Semiconductor Products

Transistors

FETs, MOSFETs

Single FETs, MOSFETs

FDR6674A

Banner
productimage

FDR6674A

MOSFET N-CH 30V 11.5A SUPERSOT8

Manufacturer: onsemi

Categories: Single FETs, MOSFETs

Quality Control: Learn More

The onsemi FDR6674A is an N-Channel Power MOSFET from the PowerTrench® series, housed in a SuperSOT™-8 package. This device features a Drain-Source Voltage (Vdss) of 30V and a continuous drain current (Id) of 11.5A at 25°C ambient temperature, with a maximum power dissipation of 1.8W (Ta). The on-resistance (Rds On) is specified as a maximum of 9.5mOhm at 10.5A and 4.5V gate-source voltage. Key parameters include a gate charge (Qg) of 46 nC at 4.5V and input capacitance (Ciss) of 5070 pF at 15V. This MOSFET is designed for surface mount applications and operates across a temperature range of -55°C to 150°C. The FDR6674A is suitable for power management solutions in various industries.

Additional Information

Series: PowerTrench®RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)
Technical Details:
PackagingTape & Reel (TR)
Package / Case8-LSOP (0.130"", 3.30mm Width)
Mounting TypeSurface Mount
Operating Temperature-55°C ~ 150°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeN-Channel
Current - Continuous Drain (Id) @ 25°C11.5A (Ta)
Rds On (Max) @ Id, Vgs9.5mOhm @ 10.5A, 4.5V
FET Feature-
Power Dissipation (Max)1.8W (Ta)
Vgs(th) (Max) @ Id2V @ 250µA
Supplier Device PackageSuperSOT™-8
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Vgs (Max)±12V
Drain to Source Voltage (Vdss)30 V
Gate Charge (Qg) (Max) @ Vgs46 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds5070 pF @ 15 V

Request a Quote

Name (required)

Phone (required)

Work Email (required)

Country (required)

Company Name (required)

CAPTCHA

Clients Also Buy
product image
FDN338P

MOSFET P-CH 20V 1.6A SUPERSOT3

product image
FDG6332C

MOSFET N/P-CH 20V 0.7A SC88

product image
FDC6420C

MOSFET N/P-CH 20V 3A/2.2A SSOT6