FDR6580
MOSFET N-CH 20V 11.2A SUPERSOT8Manufacturer: onsemi
Categories: Single FETs, MOSFETs
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The onsemi FDR6580 is an N-Channel PowerTrench® MOSFET designed for high-efficiency power management applications. This device features a Drain to Source Voltage (Vdss) of 20V and a continuous drain current (Id) of 11.2A at 25°C, with a maximum power dissipation of 1.8W. The on-resistance (Rds On) is specified at a maximum of 9mOhm at 11.2A and 4.5V Vgs. Key parameters include a gate charge (Qg) of 48nC at 4.5V Vgs and input capacitance (Ciss) of 3829pF at 10V Vds. It operates with drive voltages from 2.5V to 4.5V and has a gate-source voltage (Vgs) tolerance of ±8V. The threshold voltage (Vgs(th)) is a maximum of 1.5V at 250µA. Packaged in a SuperSOT™-8 (8-LSOP) and supplied on tape and reel, this MOSFET is suitable for surface mount configurations and operates across a temperature range of -55°C to 150°C. It finds application in areas such as battery management, power supplies, and motor control.
Additional Information
Series: PowerTrench®RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-LSOP (0.130"", 3.30mm Width) |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 11.2A (Ta) |
| Rds On (Max) @ Id, Vgs | 9mOhm @ 11.2A, 4.5V |
| FET Feature | - |
| Power Dissipation (Max) | 1.8W (Ta) |
| Vgs(th) (Max) @ Id | 1.5V @ 250µA |
| Supplier Device Package | SuperSOT™-8 |
| Drive Voltage (Max Rds On, Min Rds On) | 2.5V, 4.5V |
| Vgs (Max) | ±8V |
| Drain to Source Voltage (Vdss) | 20 V |
| Gate Charge (Qg) (Max) @ Vgs | 48 nC @ 4.5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 3829 pF @ 10 V |
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