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FDR4420A

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FDR4420A

MOSFET N-CH 30V 11A SUPERSOT8

Manufacturer: onsemi

Categories: Single FETs, MOSFETs

Quality Control: Learn More

The onsemi FDR4420A is an N-Channel MOSFET designed for efficient power switching applications. This device features a 30V drain-to-source voltage (Vdss) and a continuous drain current (Id) of 11A at 25°C. The low on-resistance of 9mOhm at 11A and 10V gate-source voltage (Vgs) minimizes conduction losses. With a maximum power dissipation of 1.8W (Ta) and an operating temperature range of -55°C to 150°C, it is suitable for demanding environments. The SuperSOT™-8 package, also known as 8-LSOP, offers a compact footprint for surface mounting. Key parameters include a gate charge (Qg) of 33 nC at 5V Vgs and input capacitance (Ciss) of 2560 pF at 15V Vds. This component is utilized across various industries requiring robust power management solutions.

Additional Information

Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)
Technical Details:
PackagingTape & Reel (TR)
Package / Case8-LSOP (0.130"", 3.30mm Width)
Mounting TypeSurface Mount
Operating Temperature-55°C ~ 150°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeN-Channel
Current - Continuous Drain (Id) @ 25°C11A (Ta)
Rds On (Max) @ Id, Vgs9mOhm @ 11A, 10V
FET Feature-
Power Dissipation (Max)1.8W (Ta)
Vgs(th) (Max) @ Id3V @ 250µA
Supplier Device PackageSuperSOT™-8
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Vgs (Max)±20V
Drain to Source Voltage (Vdss)30 V
Gate Charge (Qg) (Max) @ Vgs33 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds2560 pF @ 15 V

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