FDPF8N60ZUT
MOSFET N-CH 600V 6.5A TO220FManufacturer: onsemi
Categories: Single FETs, MOSFETs
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The onsemi FDPF8N60ZUT is a UniFET™ N-Channel Power MOSFET designed for high-efficiency switching applications. This device features a Drain-Source Voltage (Vdss) of 600 V and a continuous Drain Current (Id) of 6.5 A at 25°C (Tc). Its low on-resistance, specified as 1.35 Ohm maximum at 3.25 A and 10 V (Vgs), minimizes conduction losses. The Gate Charge (Qg) is 26 nC maximum at 10 V (Vgs), contributing to reduced switching losses. The MOSFET is housed in a TO-220F-3 package facilitating through-hole mounting. With a maximum power dissipation of 34.5 W (Tc) and an operating temperature range of -55°C to 150°C (TJ), it is suitable for use in power supplies, lighting, and industrial motor control applications.
Additional Information
Series: UniFET™RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 Full Pack |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 6.5A (Tc) |
| Rds On (Max) @ Id, Vgs | 1.35Ohm @ 3.25A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 34.5W (Tc) |
| Vgs(th) (Max) @ Id | 5V @ 250µA |
| Supplier Device Package | TO-220F-3 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 600 V |
| Gate Charge (Qg) (Max) @ Vgs | 26 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1265 pF @ 25 V |
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