FDPF8N50NZU
MOSFET N-CH 500V 6.5A TO220FManufacturer: onsemi
Categories: Single FETs, MOSFETs
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onsemi UniFET-II™ FDPF8N50NZU is a 500V N-Channel Power MOSFET designed for high efficiency applications. This device features a low Rds(on) of 1.2 Ohm maximum at 4A, 10V, and a continuous drain current capability of 6.5A at 25°C (Tc). With a gate charge of 18 nC at 10V and input capacitance of 735 pF at 25V, it facilitates efficient switching characteristics. The TO-220F-3 package provides a robust thermal solution with a maximum power dissipation of 40W (Tc). This MOSFET is suitable for use in power supply units, lighting, and industrial motor control applications. It operates across a temperature range of -55°C to 150°C (TJ) and is supplied in tube packaging.
Additional Information
Series: UniFET-II™RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 Full Pack |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 6.5A (Tc) |
| Rds On (Max) @ Id, Vgs | 1.2Ohm @ 4A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 40W (Tc) |
| Vgs(th) (Max) @ Id | 5V @ 250µA |
| Supplier Device Package | TO-220F-3 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±25V |
| Drain to Source Voltage (Vdss) | 500 V |
| Gate Charge (Qg) (Max) @ Vgs | 18 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 735 pF @ 25 V |
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