FDPF8N50NZT
MOSFET N-CH 500V 8A TO220FManufacturer: onsemi
Categories: Single FETs, MOSFETs
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The onsemi UniFET™ FDPF8N50NZT is an N-Channel Power MOSFET designed for high-efficiency switching applications. This component features a 500V drain-source breakdown voltage (Vdss) and a continuous drain current rating of 8A at 25°C (Tc). With a maximum on-resistance (Rds On) of 850mOhm at 4A and 10V gate-source voltage, it offers low conduction losses. The FDPF8N50NZT has a typical gate charge of 18nC and an input capacitance of 7360pF, facilitating efficient switching. Its TO-220F-3 package allows for through-hole mounting and dissipates up to 40.3W at 25°C (Tc). This device is suitable for use in power supplies, lighting, and motor control applications. The operating temperature range is -55°C to 150°C (TJ).
Additional Information
Series: UniFET™RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 Full Pack |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 8A (Tc) |
| Rds On (Max) @ Id, Vgs | 850mOhm @ 4A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 40.3W (Tc) |
| Vgs(th) (Max) @ Id | 5V @ 250µA |
| Supplier Device Package | TO-220F-3 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±25V |
| Drain to Source Voltage (Vdss) | 500 V |
| Gate Charge (Qg) (Max) @ Vgs | 18 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 7360 pF @ 25 V |