FDPF8N50NZF
MOSFET N-CH 500V 7A TO220FManufacturer: onsemi
Categories: Single FETs, MOSFETs
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onsemi UniFET-II™ FDPF8N50NZF is an N-Channel Power MOSFET designed for high-efficiency power switching applications. This device features a 500V drain-source breakdown voltage (Vdss) and a continuous drain current (Id) of 7A at 25°C (Tc). With a maximum on-resistance (Rds On) of 1 Ohm at 3.5A and 10V Vgs, it offers low conduction losses. The device boasts a low gate charge (Qg) of 18 nC at 10V and an input capacitance (Ciss) of 735 pF at 25V, contributing to efficient switching performance. It is packaged in a TO-220F-3 through-hole configuration, rated for a maximum power dissipation of 40W (Tc). Typical applications include power supplies, lighting, and motor control systems. The operating temperature range is -55°C to 150°C (TJ).
Additional Information
Series: UniFET-II™RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 Full Pack |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 7A (Tc) |
| Rds On (Max) @ Id, Vgs | 1Ohm @ 3.5A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 40W (Tc) |
| Vgs(th) (Max) @ Id | 5V @ 250µA |
| Supplier Device Package | TO-220F-3 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±25V |
| Drain to Source Voltage (Vdss) | 500 V |
| Gate Charge (Qg) (Max) @ Vgs | 18 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 735 pF @ 25 V |
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