FDPF8N50NZ
MOSFET N-CH 500V 8A TO220FManufacturer: onsemi
Categories: Single FETs, MOSFETs
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The onsemi FDPF8N50NZ is a UniFET™ N-Channel MOSFET designed for high-efficiency power switching applications. This component features a 500V drain-source breakdown voltage (Vdss) and a continuous drain current (Id) capability of 8A at 25°C. With a maximum on-resistance (Rds On) of 850mOhm at 4A and 10V gate-source voltage, it offers low conduction losses. The device boasts a low gate charge (Qg) of 18 nC at 10V, contributing to efficient switching performance. Packaged in a TO-220F-3, it is suitable for through-hole mounting. Key parameters include a maximum power dissipation of 40.3W (Tc) and an operating temperature range of -55°C to 150°C (TJ). This MOSFET is utilized across various industries including industrial power supplies, lighting, and motor control.
Additional Information
Series: UniFET™RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 Full Pack |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 8A (Tc) |
| Rds On (Max) @ Id, Vgs | 850mOhm @ 4A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 40.3W (Tc) |
| Vgs(th) (Max) @ Id | 5V @ 250µA |
| Supplier Device Package | TO-220F-3 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±25V |
| Drain to Source Voltage (Vdss) | 500 V |
| Gate Charge (Qg) (Max) @ Vgs | 18 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 735 pF @ 25 V |
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